USPTO Patents Application 09925512

WHAT IS CLAIMED IS:

1. A method of manufacturing a semiconductor device comprising the steps of:
forming a conductive film over a semiconductor with an insulating film
5 therebetween;

forming a resist pattern on the conductive film by using a photomask having a
diffraction grating pattern or a reticle having a diffraction grating pattern, wherein a
thickness of an edge portion of the resist pattern is smaller than a thickness of a middle
portion of the resist pattern;
10 forming a gate electrode by etching using the resist pattern, wherein a thickness of

an edge portion of the gate electrode is smaller than a thickness of a middle portion of the
gate electrode;

introducing an impurity element into the semiconductor with the gate electrode as
a mask to form a first impurity region and a second impurity region in the semiconductor,
15 wherein the first impurity region is not overlapped with the gate electrode and the second
impurity region is overlapped with the edge portion of the gate electrode.

2. A method of manufacturing a semiconductor device comprising the steps of:
forming a conductive film over a first semiconductor and a second semiconductor
20 with an insulating film therebetween;

forming a rectangular shape first resist pattern on the conductive film over the first
semiconductor, and forming a second resist pattern on the conductive film over the
second semiconductor by using a photomask having a diffraction grating pattern or a
reticle having a diffraction grating pattern, wherein a thickness of an edge portion of the
25 second resist pattern is smaller than a thickness of a middle portion of the second resist
pattern;

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forming a rectangular shape first gate electrode over the first semiconductor by
dry etching using the first resist pattern, and forming a second gate electrode by dry
etching using the second resist pattern over the second semiconductor, wherein a
thickness of an edge portion of the second gate electrode is smaller than a thickness of a
5 middle portion of the second gate electrode;

introducing an impurity element into the first semiconductor with the first gate
electrode as a mask to form a first impurity region in the first semiconductor, wherein the
first impurity region is not overlapped with the first gate electrode, and introducing the
impurity element into the second semiconductor with the second gate electrode as a mask
10 to form a second and a third impurity regions in the second semiconductor, wherein the
second impurity region is not overlapped with the second gate electrode and the third
impurity region is overlapped with the edge portion of the second gate electrode.

3. A method of manufacturing a semiconductor device comprising the steps of:
15 forming a conductive film over a first semiconductor and a second semiconductor

with an insulating film therebetween;

forming a rectangular shape first resist pattern on the conductive film over the first
semiconductor, and forming a second resist pattern on the conductive film over the
second semiconductor by using a photomask having a diffraction grating pattern or a
20 reticle having a diffraction grating pattern, wherein a thickness of an edge portion of the
second resist pattern is smaller than a thickness of a middle portion of the second resist
pattern;

forming a rectangular shape first gate electrode over the first semiconductor by
dry etching using the first resist pattern, and forming a second gate electrode by dry
25 etching using the second resist pattern over the second semiconductor, wherein a

thickness of an edge portion of the second gate electrode is smaller than a thickness of a

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middle portion of the second gate electrode;

introducing an impurity element into the first semiconductor with the first gate
electrode as a mask to form a first impurity region in the first semiconductor, wherein the
first impurity region is not overlapped with the first gate electrode, and introducing the
5 impurity element into the second semiconductor with the second gate electrode as a mask
to form a second impurity region in the second semiconductor, wherein the second
impurity region is not overlapped with the second gate electrode;
removing the first and the second resist patterns;
forming a third resist pattern covering the first gate electrode; and
10 introducing the impurity element into the first semiconductor with the third resist

pattern as a mask to form a third impurity region in the first semiconductor, wherein the
third impurity region is not overlapped with the third resist pattern and the first gate
electrode, and introducing the impurity element into the second semiconductor with the
second gate electrode as a mask to form a fourth and a fifth impurity regions in the second
15 semiconductor, wherein the fourth impurity region is not overlapped with the second gate
electrode and the fifth impurity region is overlapped with the edge portion of the second
gate electrode.

4. A method of manufacturing a semiconductor device comprising the steps of:
20 forming a conductive film over a semiconductor with an insulating film

therebetween;

forming a resist pattern on the conductive film by using a photomask having a
translucent film portion or a reticle having a translucent film portion, wherein a thickness
of an edge portion of the resist pattern is smaller than a thickness of a middle portion of
25 the resist pattern;

forming a gate electrode by etching using the resist pattern, wherein a thickness of

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an edge portion of the gate electrode is smaller than a thickness of a middle portion of the
gate electrode;

introducing an impurity element into the semiconductor with the gate electrode as
a mask to form a first impurity region and a second impurity region in the semiconductor,
5 wherein the first impurity region is not overlapped with the gate electrode and the second
impurity region is overlapped with the edge portion of the gate electrode.

5. A method of manufacturing a semiconductor device comprising the steps of:
forming a conductive film over a first semiconductor and a second semiconductor
10 with an insulating film therebetween;

forming a rectangular shape first resist pattern on the conductive film over the first
semiconductor, and forming a second resist pattern on the conductive film over the
second semiconductor by using a photomask having a translucent film portion or a reticle
having a translucent film portion, wherein a thickness of an edge portion of the second
15 resist pattern is smaller than a thickness of a middle portion of the second resist pattern;

forming a rectangular shape first gate electrode over the first semiconductor by
dry etching using the first resist pattern, and forming a second gate electrode by dry
etching using the second resist pattern over the second semiconductor wherein a thickness
of an edge portion of the second gate electrode is smaller than a thickness of a middle
20 portion of the second gate electrode;

introducing an impurity element into the first semiconductor with the first gate
electrode as a mask to form a first impurity region in the first semiconductor, wherein the
first impurity region is not overlapped with the first gate electrode, and introducing the
impurity element into the second semiconductor with the second gate electrode as a mask
25 to form a second and a third impurity regions in the second semiconductor, wherein the
second impurity region is not overlapped with the second gate electrode and the third

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impurity region is overlapped with the edge portion of the second gate electrode.

6. A method of manufacturing a semiconductor device comprising the steps of:
forming a conductive film over a first semiconductor and a second semiconductor
5 with an insulating film therebetween;

forming a rectangular shape first resist pattern on the conductive film over the first
semiconductor, and forming a second resist pattern on the conductive film over the
second semiconductor by using a photomask having a translucent film portion or a reticle
having a translucent film portion, wherein a thickness of an edge portion of the second
10 resist pattern is smaller than a thickness of a middle portion of the second resist pattern;

forming a rectangular shape first gate electrode over the first semiconductor by
dry etching using the first resist pattern, and forming a second gate electrode by dry
etching using the second resist pattern over the second semiconductor, wherein a
thickness of an edge portion of the second gate electrode is smaller than a thickness of a
15 middle portion of the second gate electrode;

introducing an impurity element into the first semiconductor with the first gate
electrode as a mask to form a first impurity region in the first semiconductor, wherein the
first impurity region is not overlapped with the first gate electrode, and introducing the
impurity element into the second semiconductor with the second gate electrode as a mask
20 to form a second impurity region in the second semiconductor, wherein the second
impurity region is not overlapped with the second gate electrode;
removing the first and the second resist patterns;
forming a third resist pattern covering the first gate electrode: and
introducing the impurity element into the first semiconductor with the third resist
25 pattern as a mask to form a third impurity region in the first semiconductor, wherein the
third impurity region is not overlapped with the third resist pattern and the first gate

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electrode, and introducing the impurity element into the second semiconductor with the
second gate electrode as a mask to form a fourth and a fifth impurity regions in the second
semiconductor, wherein the fourth impurity region is not overlapped with the second gate
electrode and the fifth impurity region is overlapped with the edge portion of the second
5 gate electrode.

7. A method of manufacturing a semiconductor device comprising the steps of:
forming a conductive film over a semiconductor with an insulating film

therebetween;

10 forming a resist pattern on the conductive film, wherein a thickness of an edge

portion of the resist pattern is smaller than thickness of a middle portion of the resist
pattern;

forming a gate electrode by a first etching using the resist pattern wherein a
thickness of an edge portion of the gate electrode is smaller than a thickness of a middle
15 portion of the gate electrode;

introducing an impurity element into the semiconductor with the gate electrode as
a mask to form a first impurity region and a second impurity region in the semiconductor,
wherein the first impurity region is not overlapped with the gate electrode and the second
impurity region is overlapped with the edge portion of the gate electrode; and
20 making the edge portion of the second gate electrode recede by a second etching.

8. A method of manufacturing a semiconductor device comprising the steps of:
forming a conductive film over a first semiconductor and a second semiconductor

with an insulating film therebetween;
25 forming a rectangular shape first resist pattern on the conductive film over the first

semiconductor, and forming a second resist pattern on the conductive film over the

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second semiconductor, wherein a thickness of an edge portion of the resist pattern is

smaller than thickness of a middle portion of the resist pattern;

forming a rectangular shape first gate electrode over the first semiconductor by a

first dry etching using the first resist pattern, and forming a second gate electrode by the
5 first dry etching using the second resist pattern over the second semiconductor, wherein a

thickness of an edge portion of the second gate electrode is smaller than a thickness of a

middle portion of the second gate electrode;

introducing an impurity element into the first semiconductor with the first gate

electrode as a mask to form a first impurity region in the first semiconductor, wherein the
10 first impurity region is not overlapped with the first gate electrode, and introducing an

impurity element into the second semiconductor with the second gate electrode as a mask

to form a second and a third impurity regions in the second semiconductor, wherein the

second impurity region is not overlapped with the second gate electrode and the third

impurity region is overlapped with the edge portion of the second gate electrode; and
15 making the edge portion of the second gate electrode recede by a second dry

etching.

9. A method of manufacturing a semiconductor device comprising the steps of:
forming a conductive film over a first semiconductor and a second semiconductor
20 with an insulating film therebetween;

forming a first resist pattern on the conductive film over the first semiconductor
and a second resist pattern on the conductive film over the second semiconductor, wherein
a thickness of an edge portion of the first resist pattern and a second thickness of an edge
portion of the second resist pattern are smaller than thickness of a middle portion each of
25 the first and the second resist patterns;

forming a first gate electrode by a first dry etching using the first resist pattern,

wherein the first thickness of an edge portion of the first gate eLectrode is smaller than a
thickness of a middle portion of the first gate electrode, and forming the second gate
electrode by the first dry etching using the second resist pattern, wherein the second
thickness of an edge portion of the second gate electrode is smaller than a thickness of a
5 middle portion of the second gate electrode;

removing the first and the second resist patterns;

introducing an impurity element into the first semiconductor with the first gate
electrode as a mask to form a first impurity region and a second impurity region in the
first semiconductor, wherein the first impurity region is not overlapped with the first gate

10 electrode and the second impurity region is overlapped with the edge portion of the first
gate electrode, and introducing the impurity element into the second semiconductor with
the second gate electrode as a mask to form a third impurity region and a fourth impurity
region in the second semiconductor, wherein the third impurity region is not overlapped
with the second gate electrode and the second impurity region is overlapped with the edge

15 portion of the second gate electrode;

making the edge portions of the first and the second gate electrodes recede by a
second dry etching;

forming a third resist pattern over the first gate electrode, wherein the second gate
electrode is exposed from the third resist pattern; and
20 making the edge portion of the second gate electrode recede by a third dry

etching.

10. A method of manufacturing a semiconductor device comprising the steps of:
forming a conductive film over a semiconductor with an insulating film
25 therebetween;

forming a rectangular shape first resist pattern on the conductive film, and

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forming a second resist pattern on the conductive film, wherein a thickness of an edge
portion of the second resist pattern is smaller than thickness of a middle portion of the
second resist pattern;

forming a rectangular shape first gate electrode by a first dry etching using the
first resist pattern, and forming a second gate electrode by the first dry etching using the
second resist pattern, wherein a thickness of an edge portion of the second gate electrode
is smaller than a thickness of a middle portion of the second gate electrode;

removing the first and the second resist patterns;
introducing an impurity element into the semiconductor with the first gate
electrode as a mask to form a first impurity region in the semiconductor, wherein the first
impurity region is not overlapped with the first gate electrode, and introducing the
impurity element into the semiconductor with the second gate electrode as a mask to form
a second and a third impurity regions in the semiconductor, wherein the second impurity
region is not overlapped with the second gate electrode and the third impurity region is
overlapped with the edge portion of the second gate electrode; and

making the edge portion of the second gate electrode recede by a second dry

etching.

11. The method of manufacturing a semiconductor device according to claim 1,
wherein a plurality of slit portions are used as the diffraction grating pattern.

12. The method of manufacturing a semiconductor device according to claim 2,
wherein a plurality of slit portions are used as the diffraction grating pattern.

13. The method of manufacturing a semiconductor device according to claim 3,
wherein a plurality of slit portions are used as the diffraction grating pattern.

14. The method of manufacturing a semiconductor device according to claim 4,
wherein a phase of an exposure light is shifted by one wavelength by passing through the
translucent film portion, the exposure light being a single wavelength light.

5

15. The method of manufacturing a semiconductor device according to claim 5,
wherein a phase of an exposure light is shifted by one wavelength by passing through the
translucent film portion, the exposure light being a single wavelength light.

10 16. The method of manufacturing a semiconductor device according to claim 6,

wherein a phase of an exposure light is shifted by one wavelength by passing through the
translucent film portion, the exposure light being a single wavelength light.

17. The method of manufacturing a semiconductor device according to claim 9,
15 wherein the first and the second thicknesses are the same.

18. The method of manufacturing a semiconductor device according to claim 1,
wherein the edge portion of the resist pattern has tapered configuration.

20 19. The method of manufacturing a semiconductor device according to claim 2,

wherein the edge portion of the resist pattern has tapered configuration.

20. The method of manufacturing a semiconductor device according to claim 3,
wherein the edge portion of the resist pattern has tapered configuration.

25

21. The method of manufacturing a semiconductor device according to claim 4,

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wherein the edge portion of the resist pattern has tapered configuration.

22. The method of manufacturing a semiconductor device according to claim 5,
wherein the edge portion of the resist pattern has tapered configuration.

5

23. The method of manufacturing a semiconductor device according to claim 6,
wherein the edge portion of the resist pattern has tapered configuration.

24. The method of manufacturing a semiconductor device according to claim 7,
io wherein the edge portion of the resist pattern has tapered configuration.

25. The method of manufacturing a semiconductor device according to claim 8,
wherein the edge portion of the resist pattern has tapered configuration.

15 26. The method of manufacturing a semiconductor device according to claim 9,

wherein the edge portion of the resist pattern has tapered configuration.

27. The method of manufacturing a semiconductor device according to claim 10,
wherein the edge portion of the resist pattern has tapered configuration.

20

28. The method of manufacturing a semiconductor device according to claim 7,
wherein a diffraction grating pattern having a plurality of slit portions, or a translucent
film portion, is used for forming the resist pattern.

25 29. The method of manufacturing a semiconductor device according to claim 8,

wherein a diffraction grating pattern having a plurality of slit portions, or a translucent

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film portion, is used for forming the resist pattern.

30. The method of manufacturing a semiconductor device according to claim 9,
wherein a diffraction grating pattern having a plurality of slit portions, or a translucent

5 film portion, is used for forming the resist pattern.

31. The method of manufacturing a semiconductor device according to claim 10,
wherein a diffraction grating pattern having a plurality of slit portions, or a translucent
film portion, is used for forming the resist pattern.

10

32. The method of manufacturing a semiconductor device according to claim 1,
wherein the semiconductor is a semiconductor layer formed on an insulating surface.

33. The method of manufacturing a semiconductor device according to claim 4,
15 wherein the semiconductor is a semiconductor layer formed on an insulating surface.

34. The method of manufacturing a semiconductor device according to claim 7,
wherein the semiconductor is a semiconductor layer formed on an insulating surface.

20 35. The method of manufacturing a semiconductor device according to claim 1,

wherein the semiconductor is a semiconductor substrate.

36. The method of manufacturing a semiconductor device according to claim 4,
wherein the semiconductor is a semiconductor substrate.

25

37. The method of manufacturing a semiconductor device according to claim 7,

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wherein the semiconductor is a semiconductor substrate.

38. The method of manufacturing a semiconductor device according to claim 2,
wherein each of the first semiconductor and the second semiconductor is a semiconductor

5 layer formed on an insulating surface.

39. The method of manufacturing a semiconductor device according to claim 3,
wherein each of the first semiconductor and the second semiconductor is a semiconductor
layer formed on an insulating surface.

lo

40. The method of manufacturing a semiconductor device according to claim 5,
wherein each of the first semiconductor and the second semiconductor is a semiconductor
layer formed on an insulating surface.

15 41. The method of manufacturing a semiconductor device according to claim 6,

wherein each of the first semiconductor and the second semiconductor is a semiconductor
layer formed on an insulating surface.

42. The method of manufacturing a semiconductor device according to claim 8,
20 wherein each of the first semiconductor and the second semiconductor is a semiconductor

layer formed on an insulating surface.

43. The method of manufacturing a semiconductor device according to claim 9,
wherein each of the first semiconductor and the second semiconductor is a semiconductor

25 layer formed on an insulating surface.

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44. The method of manufacturing a semiconductor device according to claim 10,
wherein each of the first semiconductor and the second semiconductor is a semiconductor
layer formed on an insulating surface.

5 45. The method of manufacturing a semiconductor device according to claim 2,

wherein the first and the second semiconductors are formed in a semiconductor substrate.

46. The method of manufacturing a semiconductor device according to claim 3,
wherein the first and the second semiconductors are formed in a semiconductor substrate.

10

47. The method of manufacturing a semiconductor device according to claim 5,
wherein the first and the second semiconductors are formed in a semiconductor substrate.

48. The method of manufacturing a semiconductor device according to claim 6,
15 wherein the first and the second semiconductors are formed in a semiconductor substrate.

49. The method of manufacturing a semiconductor device according to claim 8,
wherein the first and the second semiconductors are formed in a semiconductor substrate.

20 50. The method of manufacturing a semiconductor device according to claim 9,

wherein the first and the second semiconductors are formed in a semiconductor substrate.

51. The method of manufacturing a semiconductor device according to claim 10,
wherein the first and the second semiconductors are formed in a semiconductor substrate.

25

52. The method of manufacturing a semiconductor device according to claim 1,

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wherein the etching is dry etching.

53. The method of manufacturing a semiconductor device according to claim 4,
wherein the etching is dry etching.

5

54. The method of manufacturing a semiconductor device according to claim 7,
wherein the etching is dry etching.

55. The method of manufacturing a semiconductor device according to claim 1,
io wherein the semiconductor device is incorporated into an electronic device selected from

the group consisting of a video camera, a digital camera, a projector, a head mounted
display, a car navigation system, a car stereo, a personal computer, a portable information
terminal.

15 56. The method of manufacturing a semiconductor device according to claim 2,

wherein the semiconductor device is incorporated into an electronic device selected from
the group consisting of a video camera, a digital camera, a projector, a head mounted
display, a car navigation system, a car stereo, a personal computer, a portable information
terminal.

20

57. The method of manufacturing a semiconductor device according to claim 3,
wherein the semiconductor device is incorporated into an electronic device selected from
the group consisting of a video camera, a digital camera, a projector, a head mounted
display, a car navigation system, a car stereo, a personal computer, a portable information
25 terminal.

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58. The method of manufacturing a semiconductor device according to claim 4,
wherein the semiconductor device is incorporated into an electronic device selected from
the group consisting of a video camera, a digital camera, a projector, a head mounted
display, a car navigation system, a car stereo, a personal computer, a portable information

5 terminal.

59. The method of manufacturing a semiconductor device according to claim 5,
wherein the semiconductor device is incorporated into an electronic device selected from
the group consisting of a video camera, a digital camera, a projector, a head mounted

10 display, a car navigation system, a car stereo, a personal computer, a portable information
terminal.

60. The method of manufacturing a semiconductor device according to claim 6,
wherein the semiconductor device is incorporated into an electronic device selected from

15 the group consisting of a video camera, a digital camera, a projector, a head mounted
display, a car navigation system, a car stereo, a personal computer, a portable information
terminal.

61. The method of manufacturing a semiconductor device according to claim 7,
20 wherein the semiconductor device is incorporated into an electronic device selected from

the group consisting of a video camera, a digital camera, a projector, a head mounted
display, a car navigation system, a car stereo, a personal computer, a portable information
terminal.

25 62. The method of manufacturing a semiconductor device according to claim 8,

wherein the semiconductor device is incorporated into an electronic device selected from

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the group consisting of a video camera, a digital camera, a projector, a head mounted
display, a car navigation system, a car stereo, a personal computer, a portable information
terminal.

5 63. The method of manufacturing a semiconductor device according to claim 9,

wherein the semiconductor device is incorporated into an electronic device selected from
the group consisting of a video camera, a digital camera, a projector, a head mounted
display, a car navigation system, a car stereo, a personal computer, a portable information
terminal.

10

64. The method of manufacturing a semiconductor device according to claim 10,
wherein the semiconductor device is incorporated into an electronic device selected from
the group consisting of a video camera, a digital camera, a projector, a head mounted
display, a car navigation system, a car stereo, a personal computer, a portable information
15 terminal.

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